大学MOOC 电子工艺学(新疆天山职业技术学院（本科）)1458706167 最新慕课完整章节测试答案
Chapter1p-nJunctions(P-N结)
文章目录
BasicConceptsaboutP-NJunctionsP-N结简要知识
1、单选题：
Which type of current is dominant for a pn junction under reverse bias?
选项：
A: Diffusion current
B: Drift current
C: Leakage
D: N/A
答案: 【 N/A】
Lecture2Metal-SemiconductorJunctions金-半结
1、单选题：
For an n-type GaAs MESFET, the work function difference in the gate junction is:a. qΦm>qΦsb. qΦm<qΦsc. qΦm=qΦsd. other
选项：
A: a. qΦm>qΦs
B: b. qΦm<qΦs
C: c. qΦm=qΦs
D: d. other
答案: 【 a. qΦm>qΦs】
Chapter2Field-EffectTransistors(场效应晶体管)
ControlofVthofMOSFETandSubstrateBiasEffects
1、判断题：
For a nMOSFET, the body effect would lead to its Vth more positive.
选项：
A: 正确
B: 错误
答案: 【 正确】
Current-VoltageCharacteristicsofMOSGateOxides
1、填空题：
Fowler-Nordheim tunneling is based on the __ effect.
答案: 【 quantum】
剩余75%内容付费后可查看